| Hersteller | |
| Hersteller-Teilenummer | STD7N60M2 |
| EBEE-Teilenummer | E8222089 |
| Gehäuse | TO-252(DPAK) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 600V 5A 60W 950mΩ@10V,2.5A 4V@250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2633 | $ 1.2633 |
| 10+ | $1.0371 | $ 10.3710 |
| 30+ | $0.9139 | $ 27.4170 |
| 100+ | $0.7736 | $ 77.3600 |
| 500+ | $0.7112 | $ 355.6000 |
| 1000+ | $0.6831 | $ 683.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD7N60M2 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 950mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 60W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | 271pF | |
| Gate Charge(Qg) | 8.8nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2633 | $ 1.2633 |
| 10+ | $1.0371 | $ 10.3710 |
| 30+ | $0.9139 | $ 27.4170 |
| 100+ | $0.7736 | $ 77.3600 |
| 500+ | $0.7112 | $ 355.6000 |
| 1000+ | $0.6831 | $ 683.1000 |
