| Hersteller | |
| Hersteller-Teilenummer | STD30NF06LT4 |
| EBEE-Teilenummer | E8457508 |
| Gehäuse | DPAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 35A 0.022Ω@10V,18A 70W 1.7V@250uA 1 N-channel DPAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8212 | $ 0.8212 |
| 10+ | $0.6570 | $ 6.5700 |
| 30+ | $0.5757 | $ 17.2710 |
| 100+ | $0.4944 | $ 49.4400 |
| 500+ | $0.4465 | $ 223.2500 |
| 1000+ | $0.4210 | $ 421.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD30NF06LT4 | |
| RoHS | ||
| RDS(on) | 22mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 60pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 70W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.7V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 1.6nF | |
| Gate Charge(Qg) | 31nC@48V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8212 | $ 0.8212 |
| 10+ | $0.6570 | $ 6.5700 |
| 30+ | $0.5757 | $ 17.2710 |
| 100+ | $0.4944 | $ 49.4400 |
| 500+ | $0.4465 | $ 223.2500 |
| 1000+ | $0.4210 | $ 421.0000 |
