| Hersteller | |
| Hersteller-Teilenummer | STD30N6LF6AG |
| EBEE-Teilenummer | E82970272 |
| Gehäuse | DPAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 24A 40W 25mΩ@10V,12A 2.5V@250uA 1 N-channel DPAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.1021 | $ 3.1021 |
| 10+ | $2.6753 | $ 26.7530 |
| 30+ | $2.4224 | $ 72.6720 |
| 100+ | $2.1663 | $ 216.6300 |
| 500+ | $2.0469 | $ 1023.4500 |
| 1000+ | $1.9941 | $ 1994.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD30N6LF6AG | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 30mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 58pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 24A | |
| Ciss-Input Capacitance | 1.32nF | |
| Gate Charge(Qg) | 26nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.1021 | $ 3.1021 |
| 10+ | $2.6753 | $ 26.7530 |
| 30+ | $2.4224 | $ 72.6720 |
| 100+ | $2.1663 | $ 216.6300 |
| 500+ | $2.0469 | $ 1023.4500 |
| 1000+ | $1.9941 | $ 1994.1000 |
