| Hersteller | |
| Hersteller-Teilenummer | STD13N60M2 |
| EBEE-Teilenummer | E8457506 |
| Gehäuse | DPAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 600V 11A 110W 380mΩ@10V,5.5A 4V@250uA 1 N-channel DPAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6353 | $ 0.6353 |
| 10+ | $0.5143 | $ 5.1430 |
| 30+ | $0.4538 | $ 13.6140 |
| 100+ | $0.3949 | $ 39.4900 |
| 500+ | $0.3583 | $ 179.1500 |
| 1000+ | $0.3391 | $ 339.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD13N60M2 | |
| RoHS | ||
| RDS(on) | 380mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 580pF | |
| Gate Charge(Qg) | 17nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6353 | $ 0.6353 |
| 10+ | $0.5143 | $ 5.1430 |
| 30+ | $0.4538 | $ 13.6140 |
| 100+ | $0.3949 | $ 39.4900 |
| 500+ | $0.3583 | $ 179.1500 |
| 1000+ | $0.3391 | $ 339.1000 |
