| Hersteller | |
| Hersteller-Teilenummer | MSG20T65FQS |
| EBEE-Teilenummer | E85353629 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20A 650V TO-220F IGBT Transistors / Modules ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9341 | $ 0.9341 |
| 10+ | $0.7597 | $ 7.5970 |
| 50+ | $0.6648 | $ 33.2400 |
| 100+ | $0.5573 | $ 55.7300 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,IGBT Transistoren / Module | |
| Datenblatt | MASPOWER MSG20T65FQS | |
| RoHS | ||
| Temperatur | -55℃~+175℃ | |
| Durchlaufspannung der Vermittler (Vaben) | 650V | |
| Tor-Emitter Schwellenspannung (Vge(th) Ic) | 4.5V@250uA | |
| Pd - Power Dissipation | 35W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 43.9nC@15V | |
| Td(off) | 52ns | |
| Td(on) | 16ns | |
| Reverse Transfer Capacitance (Cres) | 28.7pF | |
| Reverse Recovery Time(trr) | 254ns | |
| Switching Energy(Eoff) | 300uJ | |
| Turn-On Energy (Eon) | 790uJ | |
| Input Capacitance(Cies) | 1.5nF | |
| Pulsed Current- Forward(Ifm) | 80A | |
| Output Capacitance(Coes) | 128pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9341 | $ 0.9341 |
| 10+ | $0.7597 | $ 7.5970 |
| 50+ | $0.6648 | $ 33.2400 |
| 100+ | $0.5573 | $ 55.7300 |
