5% off
| Hersteller | |
| Hersteller-Teilenummer | YSK038N010T1A |
| EBEE-Teilenummer | E84153750 |
| Gehäuse | TO-263 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-263-2 IGBT Transistors / Modules ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1897 | $ 1.1897 |
| 10+ | $0.9833 | $ 9.8330 |
| 50+ | $0.8428 | $ 42.1400 |
| 100+ | $0.7138 | $ 71.3800 |
| 500+ | $0.6565 | $ 328.2500 |
| 1000+ | $0.6307 | $ 630.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,IGBT Transistoren / Module | |
| Datenblatt | luxin-semi YSK038N010T1A | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Typ | N-Channel | |
| Reverse Transfer Capacitance (Crss-Vds) | 31pF | |
| Pd - Power Dissipation | 236W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 120A | |
| Output Capacitance(Coss) | 1.08nF | |
| Gate Charge(Qg) | 67nC@10V | |
| Input Capacitance(Ciss) | 4.7nF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1897 | $ 1.1897 |
| 10+ | $0.9833 | $ 9.8330 |
| 50+ | $0.8428 | $ 42.1400 |
| 100+ | $0.7138 | $ 71.3800 |
| 500+ | $0.6565 | $ 328.2500 |
| 1000+ | $0.6307 | $ 630.7000 |
