5% off
| Hersteller | |
| Hersteller-Teilenummer | YGW50N65T1 |
| EBEE-Teilenummer | E84153738 |
| Gehäuse | TO-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 50A 650V TO-247-3 IGBT Transistors / Modules ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.4248 | $ 2.4248 |
| 10+ | $2.0677 | $ 20.6770 |
| 30+ | $1.7794 | $ 53.3820 |
| 90+ | $1.5489 | $ 139.4010 |
| 510+ | $1.4451 | $ 737.0010 |
| 1200+ | $1.3994 | $ 1679.2800 |
| 1800+ | $1.3825 | $ 2488.5000 |
| 4200+ | $1.3704 | $ 5755.6800 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,IGBT Transistoren / Module | |
| Datenblatt | luxin-semi YGW50N65T1 | |
| RoHS | ||
| Temperatur | -40℃~+175℃ | |
| Durchlaufspannung der Vermittler (Vaben) | 650V | |
| Tor-Emitter Schwellenspannung (Vge(th) Ic) | 4V@250uA | |
| Pd - Power Dissipation | 312W | |
| Td(off) | 180ns | |
| Td(on) | 40ns | |
| Reverse Transfer Capacitance (Cres) | 75pF | |
| Reverse Recovery Time(trr) | 20ns | |
| Switching Energy(Eoff) | 1.1mJ | |
| Turn-On Energy (Eon) | 1.9mJ | |
| Input Capacitance(Cies) | 2.8nF | |
| Output Capacitance(Coes) | 130pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.4248 | $ 2.4248 |
| 10+ | $2.0677 | $ 20.6770 |
| 30+ | $1.7794 | $ 53.3820 |
| 90+ | $1.5489 | $ 139.4010 |
| 510+ | $1.4451 | $ 737.0010 |
| 1200+ | $1.3994 | $ 1679.2800 |
| 1800+ | $1.3825 | $ 2488.5000 |
| 4200+ | $1.3704 | $ 5755.6800 |
