5% off
| Hersteller | |
| Hersteller-Teilenummer | YGQ100N65FP |
| EBEE-Teilenummer | E84153748 |
| Gehäuse | TO-247 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100A 650V TO-247 IGBT Transistors / Modules ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.8129 | $ 4.8129 |
| 10+ | $4.1343 | $ 41.3430 |
| 30+ | $3.5914 | $ 107.7420 |
| 90+ | $3.1843 | $ 286.5870 |
| 510+ | $2.9960 | $ 1527.9600 |
| 1200+ | $2.9114 | $ 3493.6800 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,IGBT Transistoren / Module | |
| Datenblatt | luxin-semi YGQ100N65FP | |
| RoHS | ||
| Temperatur | -40℃~+175℃ | |
| Durchlaufspannung der Vermittler (Vaben) | 650V | |
| Tor-Emitter Schwellenspannung (Vge(th) Ic) | 4.6V@250uA | |
| Pd - Power Dissipation | 500W | |
| Gate Charge(Qg) | 135nC@15V | |
| Td(off) | 250ns | |
| Td(on) | 75ns | |
| Reverse Transfer Capacitance (Cres) | 8pF | |
| Reverse Recovery Time(trr) | 50ns | |
| Switching Energy(Eoff) | 3.5mJ | |
| Turn-On Energy (Eon) | 4mJ | |
| Input Capacitance(Cies) | 5.67nF | |
| Output Capacitance(Coes) | 370pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.8129 | $ 4.8129 |
| 10+ | $4.1343 | $ 41.3430 |
| 30+ | $3.5914 | $ 107.7420 |
| 90+ | $3.1843 | $ 286.5870 |
| 510+ | $2.9960 | $ 1527.9600 |
| 1200+ | $2.9114 | $ 3493.6800 |
