| Hersteller | |
| Hersteller-Teilenummer | IKW50N60DTP |
| EBEE-Teilenummer | E8501514 |
| Gehäuse | TO-247-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | TO-247-3 IGBT Transistors / Modules ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.8975 | $ 2.8975 |
| 10+ | $2.4900 | $ 24.9000 |
| 30+ | $2.2352 | $ 67.0560 |
| 90+ | $1.9741 | $ 177.6690 |
| 510+ | $1.8563 | $ 946.7130 |
| 990+ | $1.8038 | $ 1785.7620 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,IGBT Transistoren / Module | |
| Datenblatt | Infineon Technologies IKW50N60DTP | |
| RoHS | ||
| Temperatur | -40℃~+175℃ | |
| Durchlaufspannung der Vermittler (Vaben) | 600V | |
| Tor-Emitter Schwellenspannung (Vge(th) Ic) | [email protected] | |
| Pd - Power Dissipation | 319.2W | |
| Gate Charge(Qg) | 249nC@15V | |
| Td(off) | 215ns | |
| Td(on) | 20ns | |
| Reverse Transfer Capacitance (Cres) | 67pF | |
| Reverse Recovery Time(trr) | 115ns | |
| Switching Energy(Eoff) | 850uJ | |
| Turn-On Energy (Eon) | 1.53mJ | |
| Input Capacitance(Cies) | 1.95nF | |
| Pulsed Current- Forward(Ifm) | 150A | |
| Output Capacitance(Coes) | 109pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.8975 | $ 2.8975 |
| 10+ | $2.4900 | $ 24.9000 |
| 30+ | $2.2352 | $ 67.0560 |
| 90+ | $1.9741 | $ 177.6690 |
| 510+ | $1.8563 | $ 946.7130 |
| 990+ | $1.8038 | $ 1785.7620 |
