| Hersteller | |
| Hersteller-Teilenummer | IDH04G65C6XKSA1 |
| EBEE-Teilenummer | E86577446 |
| Gehäuse | TO-220-2 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 1.35V@4A 12A TO-220-2 SiC Diodes ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6975 | $ 1.6975 |
| 10+ | $1.4467 | $ 14.4670 |
| 50+ | $1.2905 | $ 64.5250 |
| 100+ | $1.1312 | $ 113.1200 |
| 500+ | $1.0586 | $ 529.3000 |
| 1000+ | $1.0271 | $ 1027.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Geräte aus Siliziumkarbid (SiC) ,SiC Dioden | |
| Datenblatt | Infineon Technologies IDH04G65C6XKSA1 | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 14uA@420V | |
| Spannung - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.35V@4A | |
| Current - Rectified | 12A | |
| Non-Repetitive Peak Forward Surge Current | 29A | |
| Operating Junction Temperature Range | -55℃~+175℃ |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6975 | $ 1.6975 |
| 10+ | $1.4467 | $ 14.4670 |
| 50+ | $1.2905 | $ 64.5250 |
| 100+ | $1.1312 | $ 113.1200 |
| 500+ | $1.0586 | $ 529.3000 |
| 1000+ | $1.0271 | $ 1027.1000 |
