20% off
| Hersteller | |
| Hersteller-Teilenummer | HC3D04065A |
| EBEE-Teilenummer | E822449552 |
| Gehäuse | TO-220-2L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V Independent Type 1.3V@4A TO-220-2L SiC Diodes ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6850 | $ 0.6850 |
| 10+ | $0.5517 | $ 5.5170 |
| 50+ | $0.4850 | $ 24.2500 |
| 100+ | $0.4184 | $ 41.8400 |
| 500+ | $0.3790 | $ 189.5000 |
| 1000+ | $0.3579 | $ 357.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Silicon Carbide (SiC) Devices ,SiC Diodes | |
| Datenblatt | HXY MOSFET HC3D04065A | |
| RoHS | ||
| Reverse Leakage Current (Ir) | 10uA@650V | |
| Diode Configuration | Independent | |
| Voltage - DC Reverse (Vr) (Max) | 650V | |
| Voltage - Forward(Vf@If) | 1.3V@4A |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6850 | $ 0.6850 |
| 10+ | $0.5517 | $ 5.5170 |
| 50+ | $0.4850 | $ 24.2500 |
| 100+ | $0.4184 | $ 41.8400 |
| 500+ | $0.3790 | $ 189.5000 |
| 1000+ | $0.3579 | $ 357.9000 |
