40% off
| Hersteller | |
| Hersteller-Teilenummer | E18P100KC |
| EBEE-Teilenummer | E829781157 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 18A 36.7W 110mΩ@10V,6A 1.2V@250uA 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1286 | $ 0.6430 |
| 50+ | $0.1018 | $ 5.0900 |
| 150+ | $0.0903 | $ 13.5450 |
| 500+ | $0.0760 | $ 38.0000 |
| 2500+ | $0.0658 | $ 164.5000 |
| 5000+ | $0.0620 | $ 310.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Existar E18P100KC | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 110mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.3pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 36.7W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 2.11nF | |
| Gate Charge(Qg) | 35nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1286 | $ 0.6430 |
| 50+ | $0.1018 | $ 5.0900 |
| 150+ | $0.0903 | $ 13.5450 |
| 500+ | $0.0760 | $ 38.0000 |
| 2500+ | $0.0658 | $ 164.5000 |
| 5000+ | $0.0620 | $ 310.0000 |
