20% off
| Hersteller | |
| Hersteller-Teilenummer | E080N020HL1 |
| EBEE-Teilenummer | E829781173 |
| Gehäuse | PDFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 80V 35A 35W 20mΩ@10V,12A 2V@250uA 1 N-channel PDFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2040 | $ 1.0200 |
| 50+ | $0.1630 | $ 8.1500 |
| 150+ | $0.1455 | $ 21.8250 |
| 500+ | $0.1236 | $ 61.8000 |
| 2500+ | $0.1006 | $ 251.5000 |
| 5000+ | $0.0947 | $ 473.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Existar E080N020HL1 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 20mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 29pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 80V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 35A | |
| Ciss-Input Capacitance | 792pF | |
| Output Capacitance(Coss) | 342pF | |
| Gate Charge(Qg) | 13nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2040 | $ 1.0200 |
| 50+ | $0.1630 | $ 8.1500 |
| 150+ | $0.1455 | $ 21.8250 |
| 500+ | $0.1236 | $ 61.8000 |
| 2500+ | $0.1006 | $ 251.5000 |
| 5000+ | $0.0947 | $ 473.5000 |
