パワーオーバーイーサネット(PoE)コントローラ
Üretici
- NXP Semicon
Paket
- SOIC-20-300mil
動作温度
- 60V
帯域幅プロダクト(GBP)を得る
- -40℃~+85℃
評価される電圧
- Power receiving device (PD)
積分非線形性
- 1
検出タイプ
- 13W
- 12.95W
Görseller | Fiyatlandırma | Miktar | Stok Durumu | Üretici Parça No. | eBee Part# | Manufacturer | Product Name | Description | RoHS | Paket | Ambalaj |
|---|
Görseller | Fiyatlandırma | Miktar | Stok Durumu | Üretici Parça No. | eBee Parça No. | Üretici | Ürün Adı | Açıklama | RoHS | Paket | Ambalaj |
|---|---|---|---|---|---|---|---|---|---|---|---|
1+ $3.0444 200+ $1.2146 500+ $1.1746 1000+ $1.1554 | Min: 1 Çarpan: 1 | - | MCZ34670EG | E85796551 | NXP Semicon | NXP Semicon MCZ34670EG | - | - | SOIC-20-300mil | Tube-packed | |
1+ $12.6008 200+ $5.0292 500+ $4.8601 1000+ $4.7783 | Min: 1 Çarpan: 1 | - | MCZ34670EGR2 | E85670151 | NXP Semicon | NXP Semicon MCZ34670EGR2 | - | - | SOIC-20-300mil | Tube-packed |
- 1