| Üretici | |
| Üretici Parça No. | FGY75T120SWD |
| EBEE Parça No. | E820047184 |
| Paket | TO-247-3 |
| Müşteri No. | |
| Veri Sayfası | |
| EDA Modelleri | |
| ECCN | EAR99 |
| Açıklama | TO-247-3 IGBT Transistors / Modules ROHS |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $6.0845 | $ 6.0845 |
| 10+ | $5.2333 | $ 52.3330 |
| 30+ | $4.7132 | $ 141.3960 |
| 90+ | $4.2781 | $ 385.0290 |
| Tür | Açıklama | Tümünü Seç |
|---|---|---|
| Kategori | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Veri Sayfası | onsemi FGY75T120SWD | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.6V@75mA | |
| Pd - Power Dissipation | 714W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 214nC@15V | |
| Td(off) | 171ns | |
| Td(on) | 42ns | |
| Reverse Transfer Capacitance (Cres) | 29.6pF | |
| Reverse Recovery Time(trr) | 204ns | |
| Switching Energy(Eoff) | 2.32mJ | |
| Turn-On Energy (Eon) | 5mJ | |
| Input Capacitance(Cies) | 6.331nF | |
| Pulsed Current- Forward(Ifm) | 300A | |
| Output Capacitance(Coes) | 234pF |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $6.0845 | $ 6.0845 |
| 10+ | $5.2333 | $ 52.3330 |
| 30+ | $4.7132 | $ 141.3960 |
| 90+ | $4.2781 | $ 385.0290 |
