| Üretici | |
| Üretici Parça No. | FGA40N65SMD |
| EBEE Parça No. | E8444005 |
| Paket | TO-3P |
| Müşteri No. | |
| Veri Sayfası | |
| EDA Modelleri | |
| ECCN | EAR99 |
| Açıklama | 349W 80A 650V FS(Field Stop) TO-3PN IGBT Transistors / Modules ROHS |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $3.3960 | $ 3.3960 |
| 10+ | $2.9228 | $ 29.2280 |
| 30+ | $2.1664 | $ 64.9920 |
| 90+ | $1.8642 | $ 167.7780 |
| 450+ | $1.7265 | $ 776.9250 |
| 900+ | $1.6664 | $ 1499.7600 |
| Tür | Açıklama | Tümünü Seç |
|---|---|---|
| Kategori | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Veri Sayfası | onsemi FGA40N65SMD | |
| RoHS | ||
| Operating Temperature | - | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.5V@250uA | |
| Pd - Power Dissipation | 349W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 119nC | |
| Td(off) | 92ns | |
| Td(on) | 12ns | |
| Reverse Transfer Capacitance (Cres) | 50pF | |
| Reverse Recovery Time(trr) | 42ns | |
| Switching Energy(Eoff) | 260uJ | |
| Turn-On Energy (Eon) | 820uJ | |
| Input Capacitance(Cies) | 1.88nF | |
| Pulsed Current- Forward(Ifm) | 120A | |
| Output Capacitance(Coes) | 180pF |
| Adet | Birim Fiyat | Toplam Fiyat |
|---|---|---|
| 1+ | $3.3960 | $ 3.3960 |
| 10+ | $2.9228 | $ 29.2280 |
| 30+ | $2.1664 | $ 64.9920 |
| 90+ | $1.8642 | $ 167.7780 |
| 450+ | $1.7265 | $ 776.9250 |
| 900+ | $1.6664 | $ 1499.7600 |
