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Silicon Carbide Field Effect Transistor (MOSFET)

The Results of Silicon Carbide Field Effect Transistor (MOSFET)1

Manufacturer

  • CISSOID

Package

  • -

Gate Threshold Voltageu200b

  • 450A

Supply Voltage (VCCB)

  • 6 N-Channel

Drain Source Threshold Voltage

  • 1200V
Results:1
  • 1
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Quantity
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Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
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Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
1+
$8345.0826
200+
$3329.7424
500+
$3218.4751
1000+
$3163.4964
Min: 1
Mult: 1
60155
In Stock
CXT-PLA3SA12450AACISSOID
Silicon Carbide Field Effect Transistor (MOSFET) ROHS
E817662937-Tray
  • 1

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