Silicon Carbide Field Effect Transistor (MOSFET)

The Results of Silicon Carbide Field Effect Transistor (MOSFET)2

Smart Filtering

Manufacturer

Bruckewell

Package

TO-263-7
TO-247-4

Trip Current

188W

Drain Source On-State Resistance

61nC

Gate Threshold Voltageu200b

35A

Segment Drive Current

-

Supply Voltage (VCCB)

1 N-Channel

Drain-Source On-State Resistance(18V)

-

Drain-Source On-State Resistance(20V)

-

Vgs(th)

77mΩ

V(BR)DSS

-

Drain Source Voltage

-

Drain Source Threshold Voltage

1200V

With Lamp

4V

Results:2 Smart Filtering

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	eBee Part#	Package	Packaging	Drain-Source On-State Resistance(18V)	Drain-Source On-State Resistance(20V)	Drain Source Voltage	Drain Source Threshold Voltage

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	eBee Part#	Package	Packaging	Drain-Source On-State Resistance(18V)	Drain-Source On-State Resistance(20V)	Drain Source Voltage	Drain Source Threshold Voltage
Datasheet	1+ $17.7543 10+ $17.0547 30+ $15.8459 90+ $14.7892	Min: 1 Mult: 1	22120 In Stock	CMS120N080WK	Bruckewell	TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS		E829781282	TO-247-4	Tube-packed	-	-	-	-
Datasheet	1+ $21.6691 10+ $20.8173 30+ $19.3401 100+ $18.0516	Min: 1 Mult: 1	2358 In Stock	CMS120N080B	Bruckewell	TO-263-7 Silicon Carbide Field Effect Transistor (MOSFET) ROHS		E829781281	TO-263-7	Tape & Reel (TR)	-	-	-	-