Silicon Carbide Field Effect Transistor (MOSFET)

The Results of Silicon Carbide Field Effect Transistor (MOSFET)10

Manufacturer

  • Tokmas

Package

  • TO-247-3
  • TO-247-4L
  • TO-247-4

Gain Bandwidth Product(GBP)

  • -55℃~+150℃
  • -55℃~+175℃

Trip Current

  • 125W
  • 62W
  • 330W
  • 171W
  • 463W

Drain Source On-State Resistance

  • 160nC
  • 50nC
  • 65nC
  • 164nC

Gate Threshold Voltageu200b

  • 7A
  • 60A
  • 19A
  • 30A
  • 90A

Input Capacitance

  • 29pF
  • 36pF
  • 77pF
  • 42.8pF

Output Capacitance

  • 3550pF
  • 950pF
  • 1700pF
  • 4700pF

Capacityrange

  • 231pF

Segment Drive Current

  • -

Supply Voltage (VCCB)

  • 1 N-Channel

Drain-Source On-State Resistance(18V)

  • -

Drain-Source On-State Resistance(20V)

  • -

Vgs(th)

  • 45mΩ
  • 165mΩ
  • 65mΩ
  • 27mΩ

Encapsulated Type

  • 2.5V
  • 2.3V

V(BR)DSS

  • Single Tube

Drain-Source On-State Resistance(10V)

  • 1200V
  • 1700V
  • 650V

Drain Source Voltage

  • -

Drain Source Threshold Voltage

  • 1200V
Results:10
  • 1
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Input Capacitance
Output Capacitance
Drain-Source On-State Resistance(18V)
Drain-Source On-State Resistance(20V)
Vgs(th)
Encapsulated Type
V(BR)DSS
Drain-Source On-State Resistance(10V)
Drain Source Voltage
Images
Pricing
Quantity
Availability
Mfr.Part #
eBee Part#
Manufacturer
Description
RoHS
Package
Packaging
Input Capacitance
Output Capacitance
Drain-Source On-State Resistance(18V)
Drain-Source On-State Resistance(20V)
Vgs(th)
Encapsulated Type
V(BR)DSS
Drain-Source On-State Resistance(10V)
Drain Source Voltage
1+
$3.9965
10+
$3.5897
30+
$2.4423
90+
$2.1971
Min: 1
Mult: 1
873
In Stock
CI7N170SME82842690Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-3Tube-packed
-
-
-
-
-
-
-
-
-
1+
$7.1436
10+
$6.3092
30+
$5.4948
90+
$5.0676
Min: 1
Mult: 1
371
In Stock
CI60N120SM4E82980704Tokmas
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-4LTube-packed
-
-
-
-
-
-
-
-
-
1+
$4.0424
10+
$3.5966
30+
$2.7360
90+
$2.4516
Min: 1
Mult: 1
269
In Stock
CI19N120SME82959833Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-3Tube-packed
-
-
-
-
-
-
-
-
-
1+
$4.1666
10+
$3.6186
30+
$3.2937
90+
$2.9653
Min: 1
Mult: 1
245
In Stock
CI30N65SME83010930Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-3Tube-packed
-
-
-
-
-
-
-
-
-
1+
$4.6293
10+
$4.0632
30+
$3.5732
90+
$3.2321
Min: 1
Mult: 1
165
In Stock
CI40N65SM(TOKMAS)E818214413Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-3Tube-packed
-
-
-
-
-
-
-
-
-
1+
$12.1314
10+
$10.6433
30+
$9.7305
90+
$8.9647
Min: 1
Mult: 1
147
In Stock
CI90N120SME85364636Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-3Tube-packed
-
-
-
-
-
-
-
-
-
1+
$29.2540
30+
$28.0760
Min: 1
Mult: 1
90
In Stock
CI72N170SME841782025Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-3Tube-packed
-
-
-
-
-
-
-
-
-
1+
$12.1976
10+
$12.0273
30+
$11.7337
90+
$11.4782
Min: 1
Mult: 1
23
In Stock
CI90N120SM4E85364637Tokmas
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-4Tube-packed
-
-
-
-
-
-
-
-
-
1+
$5.4551
10+
$4.7687
30+
$4.1693
90+
$3.7564
Min: 1
Mult: 1
20
In Stock
CI30N120M4(TOKMAS)E821547658Tokmas
TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-4Tube-packed
-
-
-
-
-
-
-
-
-
1+
$6.9812
10+
$6.1412
30+
$5.4467
90+
$5.0178
Min: 1
Mult: 1
17
In Stock
CI60N120SM5(TOKMAS)E821547659Tokmas
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
TO-247-3Tube-packed
-
-
-
-
-
-
-
-
-
  • 1