Silicon Carbide Field Effect Transistor (MOSFET)

The Results of Silicon Carbide Field Effect Transistor (MOSFET)2

Manufacturer

  • Slkor(SLKORMICRO Elec.)

Package

  • TO-247-3

Gain Bandwidth Product(GBP)

  • -55℃~+175℃@(Tj)

Trip Current

  • 134W

Drain Source On-State Resistance

  • 43nC

Gate Threshold Voltageu200b

  • 19A

Input Capacitance

  • 2pF

Output Capacitance

  • 895pF

Supply Voltage (VCCB)

  • 1 N-Channel

Vgs(th)

  • 160mΩ

Encapsulated Type

  • 2.9V

Drain-Source On-State Resistance(10V)

  • 1200V
Results:2
  • 1
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Input Capacitance
Vgs(th)
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Input Capacitance
Vgs(th)
1+
$7.4445
10+
$6.2291
30+
$5.6566
90+
$5.1780
Min: 1
Mult: 1
69419
In Stock
SL42N120ASlkor(SLKORMICRO Elec.)
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
E82760945TO-247-3Tube-packed
-
-
1+
$6.4007
10+
$5.6728
30+
$4.7355
90+
$4.3616
Min: 1
Mult: 1
12043
In Stock
SL19N120ASlkor(SLKORMICRO Elec.)
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
E82760944TO-247-3Tube-packed
-
-
  • 1