Silicon Carbide Field Effect Transistor (MOSFET)

The Results of Silicon Carbide Field Effect Transistor (MOSFET)3

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Manufacturer

REASUNOS

Package

TO-247-4
TO-247-3

Gain Bandwidth Product(GBP)

-40℃~+150℃
-40℃~+175℃

Trip Current

69W
340W
166W

Drain Source On-State Resistance

21.8nC
121nC
79nC

Gate Threshold Voltageu200b

36A
5A
68A

Input Capacitance

1.6pF
11pF

Output Capacitance

186pF
2070pF
1475pF

Supply Voltage (VCCB)

1 N-Channel

Drain-Source On-State Resistance(20V)

40mΩ

Vgs(th)

80mΩ
1000mΩ

Drain Source Threshold Voltage

1200V
1700V

With Lamp

3V
2.6V
2.4V

Results:3 Smart Filtering

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	eBee Part#	Package	Packaging	Input Capacitance	Drain-Source On-State Resistance(20V)	Drain Source Threshold Voltage
Datasheet	1+ $2.6856 10+ $2.3660 30+ $2.1673 90+ $1.9614 450+ $1.8693 900+ $1.8295	Min: 1 Mult: 1	36541 In Stock	RSM1701K0W	REASUNOS	TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS		E85371984	TO-247-3	Tube-packed	-	-	-
Datasheet	1+ $7.4121 10+ $6.5777 30+ $6.0702 90+ $5.6440	Min: 1 Mult: 1	6022 In Stock	RSM120040W	REASUNOS	TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS		E85371982	TO-247-3	Tube-packed	-	-	-
Datasheet	1+ $5.8662 10+ $5.2556 30+ $4.8818 90+ $4.5694	Min: 1 Mult: 1	66349 In Stock	RSM120080Z	REASUNOS	TO-247-4 Silicon Carbide Field Effect Transistor (MOSFET) ROHS		E85371983	TO-247-4	Tube-packed	-	-	-