IGBT Transistors / Modules

The Results of IGBT Transistors / Modules1

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Manufacturer

FUXINSEMI

Package

TO-247-3

Gain Bandwidth Product(GBP)

-40℃~+175℃

Rated Voltage

-

Collector Emitter Voltage

40A

Gate Threshold Voltage (Vgs(th)@Id)

333W

Turn?on Delay Time (Td(on))

204ns

Collector-Emitter Breakdown Voltage (Vces)

-

Input Capacitance (Cies@Vce)

1.35kV

Gate-Emitter Threshold Voltage (Vge(th)@Ic)

1.781nF@25V

Total Gate Charge (Qg@Ic,Vge)

4.8V@1mA

Diode Reverse Recovery Time (Trr)

175nC@20A,15V

Turn?off Switching Loss (Eoff)

-

Turn?on Switching Loss (Eon)

-

Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)

1.02mJ

Diode Forward Voltage (Vf@If)

1.85V@20A,15V

Chip

1.5V@20A

Results:1 Smart Filtering

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	eBee Part#	Package	Packaging	Turn?on Delay Time (Td(on))	Collector-Emitter Breakdown Voltage (Vces)	Input Capacitance (Cies@Vce)	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Forward Voltage (Vf@If)

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	eBee Part#	Package	Packaging	Turn?on Delay Time (Td(on))	Collector-Emitter Breakdown Voltage (Vces)	Input Capacitance (Cies@Vce)	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Forward Voltage (Vf@If)
Datasheet	1+ $1.8663 10+ $1.4710 30+ $1.2551 90+ $1.0103	Min: 1 Mult: 1	90279 In Stock	IHW20N135R5F	FUXINSEMI	333W 40A 1.35kV TO-247-3 IGBT Transistors / Modules ROHS		E87467022	TO-247-3	Tube-packed	-	-	-	-	-	-	-	-	-	-