IGBT Transistors / Modules

The Results of IGBT Transistors / Modules1

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Manufacturer

Jilin Sino-Microelectronics

Package

TO-220MF

Gain Bandwidth Product(GBP)

-55℃~+150℃@(Tj)

Rated Voltage

-

Collector Emitter Voltage

30A

Gate Threshold Voltage (Vgs(th)@Id)

31W

Turn?on Delay Time (Td(on))

-

Collector-Emitter Breakdown Voltage (Vces)

-

Input Capacitance (Cies@Vce)

650V

Gate-Emitter Threshold Voltage (Vge(th)@Ic)

880pF@25V

Total Gate Charge (Qg@Ic,Vge)

6.5V@250uA

Diode Reverse Recovery Time (Trr)

-

Turn?off Switching Loss (Eoff)

-

Turn?on Switching Loss (Eon)

-

Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)

-

Diode Forward Voltage (Vf@If)

1.6V@15A,15V

Chip

1.4V@15A

Results:1 Smart Filtering

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	eBee Part#	Package	Packaging	Turn?on Delay Time (Td(on))	Collector-Emitter Breakdown Voltage (Vces)	Input Capacitance (Cies@Vce)	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Forward Voltage (Vf@If)

Images	Pricing	Quantity	Availability	Mfr.Part #	Manufacturer	Description	RoHS	eBee Part#	Package	Packaging	Turn?on Delay Time (Td(on))	Collector-Emitter Breakdown Voltage (Vces)	Input Capacitance (Cies@Vce)	Gate-Emitter Threshold Voltage (Vge(th)@Ic)	Total Gate Charge (Qg@Ic,Vge)	Diode Reverse Recovery Time (Trr)	Turn?off Switching Loss (Eoff)	Turn?on Switching Loss (Eon)	Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge)	Diode Forward Voltage (Vf@If)
Datasheet	1+ $0.8251 10+ $0.6849 30+ $0.6140 100+ $0.5448 500+ $0.4792 1000+ $0.4578	Min: 1 Mult: 1	57291 In Stock	JT015N065FED	Jilin Sino-Microelectronics	31W 30A 650V TO-220MF IGBT Transistors / Modules ROHS		E82693274	TO-220MF	Tube-packed	-	-	-	-	-	-	-	-	-	-