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GaN Transistors(GaN HEMT)

The Results of GaN Transistors(GaN HEMT)1

Manufacturer

  • PN Junction Semiconductor

Package

  • DFN8080-8

Gain Bandwidth Product(GBP)

  • -55℃~+150℃

Trip Current

  • 55.5W

Drain Source On-State Resistance(8V)

  • 650V

Continuous Drain Current

  • 1 N-Channel

Gate Threshold Voltageu200b

  • 10A
Results:1
  • 1
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Continuous Drain Current
Images
Pricing
Quantity
Availability
Mfr.Part #
Manufacturer
Description
RoHS
eBee Part#
Package
Packaging
Continuous Drain Current
1+
$11.3688
200+
$4.5361
500+
$4.3844
1000+
$4.3095
Min: 1
Mult: 1
12896
In Stock
P1H06300D8PN Junction Semiconductor
DFN8080-8 GaN Transistors(GaN HEMT) ROHS
E85840753DFN8080-8Tape & Reel (TR)
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