| Manufacturer | |
| Mfr. Part # | D4N65 |
| EBEE Part # | E817179518 |
| Package | TO-252B |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4A 2.4Ω@10V,2A 75W 3V@250uA 1 N-channel TO-252B MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1206 | $ 0.6030 |
| 50+ | $0.1180 | $ 5.9000 |
| 150+ | $0.1162 | $ 17.4300 |
| 500+ | $0.1143 | $ 57.1500 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | WXDH D4N65 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Configuration | - | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 4A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.4Ω@10V,2A | |
| Power Dissipation (Pd) | 75W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF@25V | |
| Input Capacitance (Ciss@Vds) | 610pF@25V | |
| Total Gate Charge (Qg@Vgs) | 14.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1206 | $ 0.6030 |
| 50+ | $0.1180 | $ 5.9000 |
| 150+ | $0.1162 | $ 17.4300 |
| 500+ | $0.1143 | $ 57.1500 |
