| Manufacturer | |
| Mfr. Part # | TPB65R950M |
| EBEE Part # | E8883510 |
| Package | TO-263 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 4.5A 870mΩ@10V,2A 37W 4V@250uA 1 N-channel TO-263 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5166 | $ 0.5166 |
| 10+ | $0.4242 | $ 4.2420 |
| 30+ | $0.3834 | $ 11.5020 |
| 100+ | $0.3337 | $ 33.3700 |
| 500+ | $0.3125 | $ 156.2500 |
| 800+ | $0.2983 | $ 238.6400 |
| 1600+ | $0.2947 | $ 471.5200 |
| 4000+ | $0.2929 | $ 1171.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | WUXI UNIGROUP MICRO TPB65R950M | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 4.5A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 870mΩ@10V,2A | |
| Power Dissipation (Pd) | 37W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 2.1pF@100V | |
| Input Capacitance (Ciss@Vds) | 320pF@100V | |
| Total Gate Charge (Qg@Vgs) | 9.6nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.5166 | $ 0.5166 |
| 10+ | $0.4242 | $ 4.2420 |
| 30+ | $0.3834 | $ 11.5020 |
| 100+ | $0.3337 | $ 33.3700 |
| 500+ | $0.3125 | $ 156.2500 |
| 800+ | $0.2983 | $ 238.6400 |
| 1600+ | $0.2947 | $ 471.5200 |
| 4000+ | $0.2929 | $ 1171.6000 |
