| Manufacturer | |
| Mfr. Part # | NCE0103M |
| EBEE Part # | E8161844 |
| Package | SOT-89-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 100V 3A 170mΩ@4.5V,3A 1.5W 1V@250uA 1 N-channel SOT-89-3 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1504 | $ 0.7520 |
| 50+ | $0.1240 | $ 6.2000 |
| 150+ | $0.1106 | $ 16.5900 |
| 1000+ | $0.0994 | $ 99.4000 |
| 2000+ | $0.0914 | $ 182.8000 |
| 5000+ | $0.0874 | $ 437.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Wuxi NCE Power Semiconductor NCE0103M | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 100V | |
| Continuous Drain Current (Id) | 3A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 170mΩ@4.5V,3A | |
| Power Dissipation (Pd) | 1.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF | |
| Input Capacitance (Ciss@Vds) | 650pF@50V | |
| Total Gate Charge (Qg@Vgs) | 20nC@50V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.1504 | $ 0.7520 |
| 50+ | $0.1240 | $ 6.2000 |
| 150+ | $0.1106 | $ 16.5900 |
| 1000+ | $0.0994 | $ 99.4000 |
| 2000+ | $0.0914 | $ 182.8000 |
| 5000+ | $0.0874 | $ 437.0000 |
