| Manufacturer | |
| Mfr. Part # | CS10N65FA9R |
| EBEE Part # | E8115511 |
| Package | TO-220F |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 650V 10A 1Ω@10V,5A 40W 4V@250uA 1 N-channel TO-220F MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6819 | $ 0.6819 |
| 10+ | $0.5501 | $ 5.5010 |
| 50+ | $0.4827 | $ 24.1350 |
| 100+ | $0.4168 | $ 41.6800 |
| 500+ | $0.3785 | $ 189.2500 |
| 1000+ | $0.3570 | $ 357.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Wuxi China Resources Huajing Microelectronics CS10N65FA9R | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 1Ω@10V | |
| Operating Temperature - | - | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 40W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 1.642nF | |
| Output Capacitance(Coss) | 128pF | |
| Gate Charge(Qg) | 32nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6819 | $ 0.6819 |
| 10+ | $0.5501 | $ 5.5010 |
| 50+ | $0.4827 | $ 24.1350 |
| 100+ | $0.4168 | $ 41.6800 |
| 500+ | $0.3785 | $ 189.2500 |
| 1000+ | $0.3570 | $ 357.0000 |
