| Manufacturer | |
| Mfr. Part # | WNM6012-3/TR |
| EBEE Part # | E82941870 |
| Package | DFN1006-3L |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | DFN-3L(1x0.6) MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0635 | $ 0.6350 |
| 100+ | $0.0506 | $ 5.0600 |
| 300+ | $0.0442 | $ 13.2600 |
| 1000+ | $0.0393 | $ 39.3000 |
| 5000+ | $0.0354 | $ 177.0000 |
| 10000+ | $0.0335 | $ 335.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | WILLSEMI(Will Semicon) WNM6012-3/TR | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 24Ω@2.5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 700fF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.008W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Current - Continuous Drain(Id) | 250mA | |
| Ciss-Input Capacitance | 9.4pF | |
| Output Capacitance(Coss) | 2.2pF | |
| Gate Charge(Qg) | 3.4nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 10+ | $0.0635 | $ 0.6350 |
| 100+ | $0.0506 | $ 5.0600 |
| 300+ | $0.0442 | $ 13.2600 |
| 1000+ | $0.0393 | $ 39.3000 |
| 5000+ | $0.0354 | $ 177.0000 |
| 10000+ | $0.0335 | $ 335.0000 |
