| Manufacturer | |
| Mfr. Part # | WMO35N06T1 |
| EBEE Part # | E838132135 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 60V 35A 25mΩ@4.5V,35A 44.6W 1.65V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2223 | $ 1.1115 |
| 50+ | $0.1789 | $ 8.9450 |
| 150+ | $0.1603 | $ 24.0450 |
| 500+ | $0.1371 | $ 68.5500 |
| 2500+ | $0.1267 | $ 316.7500 |
| 5000+ | $0.1205 | $ 602.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,MOSFETs | |
| Datasheet | Wayon WMO35N06T1 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 60V | |
| Continuous Drain Current (Id) | 35A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 25mΩ@4.5V,35A | |
| Power Dissipation (Pd) | 44.6W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.65V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 74pF@30V | |
| Input Capacitance (Ciss@Vds) | 1750pF@30V | |
| Total Gate Charge (Qg@Vgs) | 14.5nC@10V |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 5+ | $0.2223 | $ 1.1115 |
| 50+ | $0.1789 | $ 8.9450 |
| 150+ | $0.1603 | $ 24.0450 |
| 500+ | $0.1371 | $ 68.5500 |
| 2500+ | $0.1267 | $ 316.7500 |
| 5000+ | $0.1205 | $ 602.5000 |
