| Manufacturer | |
| Mfr. Part # | SUM90330E-GE3 |
| EBEE Part # | E87325094 |
| Package | TO-263(D2PAk) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 35.1A 125W 37.5mΩ@10V,12.2A 4V@250uA 1 N-channel TO-263(D2PAk) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.9816 | $ 1.9816 |
| 200+ | $0.7912 | $ 158.2400 |
| 500+ | $0.7651 | $ 382.5500 |
| 800+ | $0.7512 | $ 600.9600 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SUM90330E-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 35.1A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 37.5mΩ@10V,12.2A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF@100V | |
| Input Capacitance (Ciss@Vds) | 1.172nF@100V | |
| Total Gate Charge (Qg@Vgs) | 32nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.9816 | $ 1.9816 |
| 200+ | $0.7912 | $ 158.2400 |
| 500+ | $0.7651 | $ 382.5500 |
| 800+ | $0.7512 | $ 600.9600 |
