| Manufacturer | |
| Mfr. Part # | SUM90140E-GE3 |
| EBEE Part # | E85913329 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 90A 375W 17mΩ@10V,30A 4V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1858 | $ 4.1858 |
| 200+ | $1.6712 | $ 334.2400 |
| 500+ | $1.6154 | $ 807.7000 |
| 800+ | $1.5876 | $ 1270.0800 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SUM90140E-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 90A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 17mΩ@10V,30A | |
| Power Dissipation (Pd) | 375W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF@100V | |
| Input Capacitance (Ciss@Vds) | 4.132nF@100V | |
| Total Gate Charge (Qg@Vgs) | 96nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1858 | $ 4.1858 |
| 200+ | $1.6712 | $ 334.2400 |
| 500+ | $1.6154 | $ 807.7000 |
| 800+ | $1.5876 | $ 1270.0800 |
