| Manufacturer | |
| Mfr. Part # | SUM90100E-GE3 |
| EBEE Part # | E83291118 |
| Package | TO-263(D2PAK) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 150A 250W 0.0114Ω@10V,16A 4V@250uA 1 N-channel TO-263(D2PAK) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0237 | $ 3.0237 |
| 200+ | $1.1712 | $ 234.2400 |
| 500+ | $1.1286 | $ 564.3000 |
| 800+ | $1.1091 | $ 887.2800 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SUM90100E-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 150A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.0114Ω@10V,16A | |
| Power Dissipation (Pd) | 250W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF@100V | |
| Input Capacitance (Ciss@Vds) | 3.93nF@100V | |
| Total Gate Charge (Qg@Vgs) | 56.7nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.0237 | $ 3.0237 |
| 200+ | $1.1712 | $ 234.2400 |
| 500+ | $1.1286 | $ 564.3000 |
| 800+ | $1.1091 | $ 887.2800 |
