| Manufacturer | |
| Mfr. Part # | SUD90330E-GE3 |
| EBEE Part # | E83291035 |
| Package | TO-252AA |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 35.8A 125W 37.5mΩ@10V,12.2A 4V@250uA 1 N-channel TO-252AA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1798 | $ 1.1798 |
| 10+ | $1.1525 | $ 11.5250 |
| 30+ | $1.1362 | $ 34.0860 |
| 100+ | $1.1180 | $ 111.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SUD90330E-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 35.8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 37.5mΩ@10V,12.2A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.172nF@100V | |
| Total Gate Charge (Qg@Vgs) | 32nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.1798 | $ 1.1798 |
| 10+ | $1.1525 | $ 11.5250 |
| 30+ | $1.1362 | $ 34.0860 |
| 100+ | $1.1180 | $ 111.8000 |
