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Vishay Intertech SIRC06DP-T1-GE3


Manufacturer
Mfr. Part #
SIRC06DP-T1-GE3
EBEE Part #
E85919291
Package
PowerPAKSO-8
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
30V 60A 0.0027Ω@10V,60A 32W 2.1V@250uA 1 N-channel PowerPAKSO-8 MOSFETs ROHS
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$1.0195$ 1.0195
200+$0.4078$ 81.5600
500+$0.3939$ 196.9500
1000+$0.3869$ 386.9000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SIRC06DP-T1-GE3
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)30V
Continuous Drain Current (Id)60A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.0027Ω@10V,60A
Power Dissipation (Pd)32W
Gate Threshold Voltage (Vgs(th)@Id)2.1V@250uA
Reverse Transfer Capacitance (Crss@Vds)60pF@15V
Input Capacitance (Ciss@Vds)2.455nF@15V
Total Gate Charge (Qg@Vgs)17.5nC@15V

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