| Manufacturer | |
| Mfr. Part # | SIRC06DP-T1-GE3 |
| EBEE Part # | E85919291 |
| Package | PowerPAKSO-8 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 30V 60A 0.0027Ω@10V,60A 32W 2.1V@250uA 1 N-channel PowerPAKSO-8 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0195 | $ 1.0195 |
| 200+ | $0.4078 | $ 81.5600 |
| 500+ | $0.3939 | $ 196.9500 |
| 1000+ | $0.3869 | $ 386.9000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIRC06DP-T1-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 30V | |
| Continuous Drain Current (Id) | 60A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 0.0027Ω@10V,60A | |
| Power Dissipation (Pd) | 32W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.1V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 60pF@15V | |
| Input Capacitance (Ciss@Vds) | 2.455nF@15V | |
| Total Gate Charge (Qg@Vgs) | 17.5nC@15V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.0195 | $ 1.0195 |
| 200+ | $0.4078 | $ 81.5600 |
| 500+ | $0.3939 | $ 196.9500 |
| 1000+ | $0.3869 | $ 386.9000 |
