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Vishay Intertech SIHU6N80E-GE3


Manufacturer
Mfr. Part #
SIHU6N80E-GE3
EBEE Part #
E85919069
Package
IPAK(TO-251)
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
800V 5.4A 78W 940mΩ@10V,3A 2V@250uA 1 N-channel IPAK(TO-251) MOSFETs ROHS
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.8701$ 2.8701
200+$1.1449$ 228.9800
500+$1.1066$ 553.3000
1000+$1.0892$ 1089.2000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SIHU6N80E-GE3
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)5.4A
Drain Source On Resistance (RDS(on)@Vgs,Id)940mΩ@10V,3A
Power Dissipation (Pd)78W
Gate Threshold Voltage (Vgs(th)@Id)2V@250uA
Reverse Transfer Capacitance (Crss@Vds)5pF@100V
Input Capacitance (Ciss@Vds)827pF@100V
Total Gate Charge (Qg@Vgs)44nC@10V

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