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Vishay Intertech SIHU2N80AE-GE3


Manufacturer
Mfr. Part #
SIHU2N80AE-GE3
EBEE Part #
E83290821
Package
TO-251AA
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
800V 1.8A 2.5Ω@10V,0.5A 62.5W 4V@250uA 1 N-channel TO-251AA MOSFETs ROHS
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.6034$ 0.6034
200+$0.2343$ 46.8600
500+$0.2254$ 112.7000
1000+$0.2218$ 221.8000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SIHU2N80AE-GE3
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)800V
Continuous Drain Current (Id)1.8A
Drain Source On Resistance (RDS(on)@Vgs,Id)2.5Ω@10V,0.5A
Power Dissipation (Pd)62.5W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)7pF@100V
Input Capacitance (Ciss@Vds)180pF
Total Gate Charge (Qg@Vgs)10.5nC@10V

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