| Manufacturer | |
| Mfr. Part # | SIHU2N80AE-GE3 |
| EBEE Part # | E83290821 |
| Package | TO-251AA |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 1.8A 2.5Ω@10V,0.5A 62.5W 4V@250uA 1 N-channel TO-251AA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6034 | $ 0.6034 |
| 200+ | $0.2343 | $ 46.8600 |
| 500+ | $0.2254 | $ 112.7000 |
| 1000+ | $0.2218 | $ 221.8000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHU2N80AE-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃ | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 1.8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.5Ω@10V,0.5A | |
| Power Dissipation (Pd) | 62.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF@100V | |
| Input Capacitance (Ciss@Vds) | 180pF | |
| Total Gate Charge (Qg@Vgs) | 10.5nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.6034 | $ 0.6034 |
| 200+ | $0.2343 | $ 46.8600 |
| 500+ | $0.2254 | $ 112.7000 |
| 1000+ | $0.2218 | $ 221.8000 |
