| Manufacturer | |
| Mfr. Part # | SIHP186N60EF-GE3 |
| EBEE Part # | E85900034 |
| Package | TO-220AB |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 18A 193mΩ@10V,9.5A 156W 3V@250uA 1 N-channel TO-220AB MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.1494 | $ 5.1494 |
| 200+ | $2.0554 | $ 411.0800 |
| 500+ | $1.9861 | $ 993.0500 |
| 1000+ | $1.9532 | $ 1953.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHP186N60EF-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 18A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 193mΩ@10V,9.5A | |
| Power Dissipation (Pd) | 156W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 52pF@100V | |
| Input Capacitance (Ciss@Vds) | 1.081nF@100V | |
| Total Gate Charge (Qg@Vgs) | 32nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.1494 | $ 5.1494 |
| 200+ | $2.0554 | $ 411.0800 |
| 500+ | $1.9861 | $ 993.0500 |
| 1000+ | $1.9532 | $ 1953.2000 |
