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Vishay Intertech SIHP080N60E-GE3


Manufacturer
Mfr. Part #
SIHP080N60E-GE3
EBEE Part #
E83280669
Package
TO-220AB
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
600V 22A 0.07Ω@10V,17A 227W 3V@250uA 1 N-channel TO-220AB MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$6.3519$ 6.3519
10+$6.2021$ 62.0210
30+$6.1027$ 183.0810
100+$6.0033$ 600.3300
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SIHP080N60E-GE3
RoHS
Operating Temperature-55℃~+150℃
Type1 N-channel
Drain Source Voltage (Vdss)600V
Continuous Drain Current (Id)22A
Drain Source On Resistance (RDS(on)@Vgs,Id)0.07Ω@10V,17A
Power Dissipation (Pd)227W
Gate Threshold Voltage (Vgs(th)@Id)3V@250uA
Reverse Transfer Capacitance (Crss@Vds)6pF
Input Capacitance (Ciss@Vds)2557pF
Total Gate Charge (Qg@Vgs)63nC@10V

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