| Manufacturer | |
| Mfr. Part # | SIHL620S-GE3 |
| EBEE Part # | E85919049 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 200V 5.2A 800mΩ@10V,3.1A 2V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9916 | $ 0.9916 |
| 200+ | $0.3956 | $ 79.1200 |
| 500+ | $0.3834 | $ 191.7000 |
| 1000+ | $0.3765 | $ 376.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHL620S-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 200V | |
| Continuous Drain Current (Id) | 5.2A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 800mΩ@10V,3.1A | |
| Power Dissipation (Pd) | 3.1W;50W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 27pF@25V | |
| Input Capacitance (Ciss@Vds) | 360pF@25V | |
| Total Gate Charge (Qg@Vgs) | 16nC@5V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9916 | $ 0.9916 |
| 200+ | $0.3956 | $ 79.1200 |
| 500+ | $0.3834 | $ 191.7000 |
| 1000+ | $0.3765 | $ 376.5000 |
