| Manufacturer | |
| Mfr. Part # | SIHFR320TR-GE3 |
| EBEE Part # | E86680016 |
| Package | TO-252AA |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 400V 3.1A 1.8Ω@10V,1.9A 4V@250uA 1 N-channel TO-252AA MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8576 | $ 0.8576 |
| 200+ | $0.3434 | $ 68.6800 |
| 500+ | $0.3312 | $ 165.6000 |
| 1000+ | $0.3260 | $ 326.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHFR320TR-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 400V | |
| Continuous Drain Current (Id) | 3.1A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 1.8Ω@10V,1.9A | |
| Power Dissipation (Pd) | 2.5W;42W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 350pF@25V | |
| Total Gate Charge (Qg@Vgs) | 20nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.8576 | $ 0.8576 |
| 200+ | $0.3434 | $ 68.6800 |
| 500+ | $0.3312 | $ 165.6000 |
| 1000+ | $0.3260 | $ 326.0000 |
