| Manufacturer | |
| Mfr. Part # | SIHFBF30S-GE3 |
| EBEE Part # | E87363744 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 900V 3.6A 3.7Ω@10V,2.2A 125W 4V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3022 | $ 2.3022 |
| 200+ | $0.9202 | $ 184.0400 |
| 500+ | $0.8888 | $ 444.4000 |
| 1000+ | $0.8732 | $ 873.2000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHFBF30S-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 900V | |
| Continuous Drain Current (Id) | 3.6A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3.7Ω@10V,2.2A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF@25V | |
| Input Capacitance (Ciss@Vds) | 1.2nF@25V | |
| Total Gate Charge (Qg@Vgs) | 78nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3022 | $ 2.3022 |
| 200+ | $0.9202 | $ 184.0400 |
| 500+ | $0.8888 | $ 444.4000 |
| 1000+ | $0.8732 | $ 873.2000 |
