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Vishay Intertech SIHFBF30S-GE3


Manufacturer
Mfr. Part #
SIHFBF30S-GE3
EBEE Part #
E87363744
Package
D2PAK(TO-263)
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
900V 3.6A 3.7Ω@10V,2.2A 125W 4V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$2.3022$ 2.3022
200+$0.9202$ 184.0400
500+$0.8888$ 444.4000
1000+$0.8732$ 873.2000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SIHFBF30S-GE3
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)900V
Continuous Drain Current (Id)3.6A
Drain Source On Resistance (RDS(on)@Vgs,Id)3.7Ω@10V,2.2A
Power Dissipation (Pd)125W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)200pF@25V
Input Capacitance (Ciss@Vds)1.2nF@25V
Total Gate Charge (Qg@Vgs)78nC@10V

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