Recommonended For You
Images are for reference only
Add to Favourites
Vishay Intertech SIHFBE30STRL-GE3
| Manufacturer | |
| Mfr. Part # | SIHFBE30STRL-GE3 |
| EBEE Part # | E87316155 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 4.1A 3Ω@10V,2.5A 125W 4V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3336 | $ 2.3336 |
| 200+ | $0.9324 | $ 186.4800 |
| 500+ | $0.9010 | $ 450.5000 |
| 800+ | $0.8854 | $ 708.3200 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHFBE30STRL-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 4.1A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 3Ω@10V,2.5A | |
| Power Dissipation (Pd) | 125W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.3nF@25V | |
| Total Gate Charge (Qg@Vgs) | 78nC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3336 | $ 2.3336 |
| 200+ | $0.9324 | $ 186.4800 |
| 500+ | $0.9010 | $ 450.5000 |
| 800+ | $0.8854 | $ 708.3200 |
