| Manufacturer | |
| Mfr. Part # | SIHF8N50D-E3 |
| EBEE Part # | E86680010 |
| Package | TO-220 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 500V 5.5A 33W 850mΩ@10V,4A 5V@250uA 1 N-channel TO-220 MOSFETs ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8823 | $ 1.8823 |
| 200+ | $0.7512 | $ 150.2400 |
| 500+ | $0.7268 | $ 363.4000 |
| 1000+ | $0.7146 | $ 714.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHF8N50D-E3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 500V | |
| Continuous Drain Current (Id) | 5.5A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 850mΩ@10V,4A | |
| Power Dissipation (Pd) | 33W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA | |
| Input Capacitance (Ciss@Vds) | 527pF@100V | |
| Total Gate Charge (Qg@Vgs) | 30nC@10V |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.8823 | $ 1.8823 |
| 200+ | $0.7512 | $ 150.2400 |
| 500+ | $0.7268 | $ 363.4000 |
| 1000+ | $0.7146 | $ 714.6000 |
