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Vishay Intertech SIHF6N65E-GE3


Manufacturer
Mfr. Part #
SIHF6N65E-GE3
EBEE Part #
E86228063
Package
TO-220
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
650V 5A 600mΩ@10V,3A 31W 4V@250uA 1 N-channel TO-220 MOSFETs ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$3.2375$ 3.2375
200+$1.2921$ 258.4200
500+$1.2486$ 624.3000
1000+$1.2287$ 1228.7000
TypeDescription
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CategoryDiscrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs
DatasheetVISHAY SIHF6N65E-GE3
RoHS
Operating Temperature-55℃~+150℃@(Tj)
Type1 N-channel
Drain Source Voltage (Vdss)650V
Continuous Drain Current (Id)5A
Drain Source On Resistance (RDS(on)@Vgs,Id)600mΩ@10V,3A
Power Dissipation (Pd)31W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Input Capacitance (Ciss@Vds)820pF@100V
Total Gate Charge (Qg@Vgs)48nC@10V

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