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Vishay Intertech SIHD2N80E-GE3
| Manufacturer | |
| Mfr. Part # | SIHD2N80E-GE3 |
| EBEE Part # | E83291011 |
| Package | TO-252 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 2.8A 62.5W 2.38Ω@10V,1A 2V@250uA 1 N-channel TO-252AA MOSFETs ROHS |
This materials supports customized cables!
Learn more >>918 In Stock for Fast Shipping
918 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9958 | $ 0.9958 |
| 10+ | $0.8163 | $ 8.1630 |
| 30+ | $0.7182 | $ 21.5460 |
| 75+ | $0.6081 | $ 45.6075 |
| 525+ | $0.5583 | $ 293.1075 |
| 975+ | $0.5356 | $ 522.2100 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHD2N80E-GE3 | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 2.75Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 62.5W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2.8A | |
| Ciss-Input Capacitance | 315pF | |
| Output Capacitance(Coss) | 20pF | |
| Gate Charge(Qg) | 90nC@10V |
Shopping Guide
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918 Stock for Shipping Fast
918 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.9958 | $ 0.9958 |
| 10+ | $0.8163 | $ 8.1630 |
| 30+ | $0.7182 | $ 21.5460 |
| 75+ | $0.6081 | $ 45.6075 |
| 525+ | $0.5583 | $ 293.1075 |
| 975+ | $0.5356 | $ 522.2100 |
Best price for more quantity?
$
