Recommonended For You
Images are for reference only
Add to Favourites
Vishay Intertech SIHD2N80AE-GE3
| Manufacturer | |
| Mfr. Part # | SIHD2N80AE-GE3 |
| EBEE Part # | E85900009 |
| Package | TO-252AA |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 800V 1.8A 2.9Ω@10V,500mA 62.5W 2V@250uA 1 N-channel TO-252AA MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5005 | $ 1.5005 |
| 200+ | $0.5988 | $ 119.7600 |
| 500+ | $0.5787 | $ 289.3500 |
| 1000+ | $0.5696 | $ 569.6000 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHD2N80AE-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 800V | |
| Continuous Drain Current (Id) | 1.8A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 2.9Ω@10V,500mA | |
| Power Dissipation (Pd) | 62.5W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Input Capacitance (Ciss@Vds) | 180pF@100V | |
| Total Gate Charge (Qg@Vgs) | 10.5nC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.5005 | $ 1.5005 |
| 200+ | $0.5988 | $ 119.7600 |
| 500+ | $0.5787 | $ 289.3500 |
| 1000+ | $0.5696 | $ 569.6000 |
