Recommonended For You
Images are for reference only
Add to Favourites
Vishay Intertech SIHD14N60E-GE3
| Manufacturer | |
| Mfr. Part # | SIHD14N60E-GE3 |
| EBEE Part # | E85753908 |
| Package | D-PAK(TO-252AA) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 600V 13A 147W 309mΩ@10V,7A 4V@250uA 1 N-channel D-PAK(TO-252AA) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2692 | $ 3.2692 |
| 225+ | $1.3051 | $ 293.6475 |
| 525+ | $1.2613 | $ 662.1825 |
| 975+ | $1.2395 | $ 1208.5125 |
Recommended For You
Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHD14N60E-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 600V | |
| Continuous Drain Current (Id) | 13A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 309mΩ@10V,7A | |
| Power Dissipation (Pd) | 147W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V@250uA | |
| Input Capacitance (Ciss@Vds) | 1.205nF@100V | |
| Total Gate Charge (Qg@Vgs) | 64nC@10V |
Shopping Guide
Expand
In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2692 | $ 3.2692 |
| 225+ | $1.3051 | $ 293.6475 |
| 525+ | $1.2613 | $ 662.1825 |
| 975+ | $1.2395 | $ 1208.5125 |
