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Vishay Intertech SIHB8N50D-GE3
| Manufacturer | |
| Mfr. Part # | SIHB8N50D-GE3 |
| EBEE Part # | E85919017 |
| Package | TO-263(D2PAk) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 500V 5.5A 156W 850mΩ@10V,4A 5V@250uA 1 N-channel TO-263(D2PAk) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
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Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.2161 | $ 2.2161 |
| 200+ | $0.8854 | $ 177.0800 |
| 500+ | $0.8562 | $ 428.1000 |
| 1000+ | $0.8416 | $ 841.6000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHB8N50D-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 500V | |
| Continuous Drain Current (Id) | 5.5A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 850mΩ@10V,4A | |
| Power Dissipation (Pd) | 156W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 5V@250uA | |
| Input Capacitance (Ciss@Vds) | 527pF@100V | |
| Total Gate Charge (Qg@Vgs) | 30nC@10V |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.2161 | $ 2.2161 |
| 200+ | $0.8854 | $ 177.0800 |
| 500+ | $0.8562 | $ 428.1000 |
| 1000+ | $0.8416 | $ 841.6000 |
