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Vishay Intertech SIHB6N65E-GE3
| Manufacturer | |
| Mfr. Part # | SIHB6N65E-GE3 |
| EBEE Part # | E85753906 |
| Package | D2PAK(TO-263) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 650V 5A 78W 600mΩ@10V,3A 2V@250uA 1 N-channel D2PAK(TO-263) MOSFETs ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
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Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3596 | $ 2.3596 |
| 200+ | $0.9428 | $ 188.5600 |
| 500+ | $0.9115 | $ 455.7500 |
| 1000+ | $0.8957 | $ 895.7000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datasheet | VISHAY SIHB6N65E-GE3 | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | 1 N-channel | |
| Drain Source Voltage (Vdss) | 650V | |
| Continuous Drain Current (Id) | 5A | |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 600mΩ@10V,3A | |
| Power Dissipation (Pd) | 78W | |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V@250uA | |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF@100V | |
| Input Capacitance (Ciss@Vds) | 820pF@100V | |
| Total Gate Charge (Qg@Vgs) | 48nC@10V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.3596 | $ 2.3596 |
| 200+ | $0.9428 | $ 188.5600 |
| 500+ | $0.9115 | $ 455.7500 |
| 1000+ | $0.8957 | $ 895.7000 |
